Differential I2C Long Cable Extender PCA9600 Module
This module is designed to enable long-range I2C communications which extend the cable length from several meters to 300 meters. It is ideal for applications that need to run over long wires such as the CAT5E Ethernet cable that is commonly used to make connections between rooms.
Seeing is believing. We are selling chips with silicon die shots
It is not uncommon to see, from time to time, the cries from innocent users that their FT232RL based devices with counterfeit chips are bricked by official driver update. One way to avoid the threat of counterfeits is to purchase from solid vendors, and we want to be one of them.
Twin RJ45 Breadkout Board
This module is designed to ease the twisted pair cable wiring for our differential I2C extender and it could be used as a RJ45 breakout board, too.
Differential I2C Long Cable Extender PCA9600 Module – BOOST
This module is designed to enable long range I2C communications which extends the cable length from several meters to 300 meters. It is ideal for applications that need to run over long wires such as the CAT5e Ethernet cable that is commonly used to make connections between rooms.
Differential I2C Long Cable Extender PCA9600 Module – BUCK
This module is designed to enable long range I2C communications which extends the cable length from several meters to 300 meters. It is ideal for applications that need to run over long wires such as the CAT5e Ethernet cable that is commonly used to make connections between rooms.
Brief Introduction to S-Ctrl Framework
Air Series firmware v2.0 introduces an automation control oriented framework S-Ctrl. This framework allows up to 32767 devices to communicate over the 2.4G RF. The network is multiple-access, which means any device could send data to any device, which is similar to Ethernet or WiFi.
AirDuino and AirDongle Firmware Upgrade
We are glad to publish v2.0 beta firmware for AirDuino and AirDongle. This is a major upgrade from v1.x. Many improvements has been made to existing functions. An automation control oriented framework S-Ctrl is introduced into this version. This framework allows up to 32767 devices to communicate over the 2.4G RF.
Research Interests
- 1998-Present: Wide bandgap materials and devices, III-Nitride power microwave devices and ICs
- 1971–1998: Gunn effect devices, GaAs FETs, microwave and optical integrated circuits, semiconductor lasers
Education
- MS, EE: Leningrad Electrotechnical Institute, Leningrad, Russia, 1971
- PhD, Physics: Semiconductors and Dielectrics, GIRICOND Science & Research Institute, Leningrad, Russia, 1979
Representative Publications
- R. Gaska, M. Gaevski, R. Jain, J. Deng, M. Islam, G. Simin, M. Shur, Novel AlInN/GaN integrated circuits operating up to 500 C, Solid-State Electronics 113 (2015) 22–27
- M. Gaevski, J. Deng, A. Dobrinsky, R. Gaska, M. Shur, and G. Simin, Static and transient characteristics of GaN power HFETs with low-conducting coating, Phys. Status Solidi C 11, No. 3–4, 866–870 (...
- R. Gaska, M. Gaevski, R. Jain, J. Deng, M. Islam, G. Simin, M. Shur, Novel AlInN/GaN integrated circuits operating up to 500 C, Solid-State Electronics 113 (2015) 22–27
- M. Gaevski, J. Deng, A. Dobrinsky, R. Gaska, M. Shur, and G. Simin, Static and transient characteristics of GaN power HFETs with low-conducting coating, Phys. Status Solidi C 11, No. 3–4, 866–870 (...
- M. Gaevski, J. Deng, R. Gaska, M. Shur, and G. Simin, GaN microwave varactors with insulated electrodes, Phys. Status Solidi C 11, No. 3–4, 898–901 (2014)
- Simin, G.S. ; Islam, M. ; Gaevski, M. ; Deng, J. ; Gaska, R. ; Shur, M.S., Low RC-Constant Perforated-Channel HFET, IEEE Electron Device Letters, Vol. 35 , Issue: 4, pp: 449 - 451 (2014)
Representative Presentations
- Kawser Ahmed, Stephen R. Anderson, Michael R. Giordano, M. Islam, G. Simin, and M. Shur, Thermal Breakdown of III-N HEMTs on different substrates, 2016 Lester Eastman Conference on High Performance...
- M. Islam, G. Simin, N. Tipirneni, J. Joh, V. Krishnamurthy, S. Pendharkar, Drain - Bulk Leakage Current Mechanisms and Model for Power GaN HEMT on Si Substrate, 2015 International Co…
- Kawser Ahmed, Stephen R. Anderson, Michael R. Giordano, M. Islam, G. Simin, and M. Shur, Thermal Breakdown of III-N HEMTs on different substrates, 2016 Lester Eastman Conference on High Performance...
- M. Islam, G. Simin, N. Tipirneni, J. Joh, V. Krishnamurthy, S. Pendharkar, Drain - Bulk Leakage Current Mechanisms and Model for Power GaN HEMT on Si Substrate, 2015 International Conference on Com...
- M. Shur, M. Gaevski, R. Gaska, G. Simin, H. Wong, N. Braga, and R. Mickevicius, (Invited) Power Loss Reduction in Perforated-Channel HFET Switches, ECS Trans. 2015 66(1): 179-183; doi:10.1149/06601...
- M. Shur, G. Simin, and R. Gaska, New Approaches to Realizing High Power Nitride Based Fiel…
Courses Taught
- ELCT 102 - Electrical Science lectures
- ELCT 221 - Electric Circuits lectures
- ELCT 563 - Semiconductor Devices lectures
- ELCT 566 - Optoelectronic Devices lectures (2008)
Appointments
- 2011-Present: Professor w. tenure, University of South Carolina
- 2005-2011: Associate Professor w. tenure, University of South Carolina
- 2001-2005: Tenure-track Associate Professor, University of South Carolina
- 1998-2001: Research Associate Prof., University of South Carolina
Memberships, Honors and Professional Services
- IEEE Senior Member
- M. Mungo Undergraduate Teaching Award, USC, 2008
- Research Progress Award, COEIT, USC April 2005
- Bestselling Backlist, 2002. Listing the book Getting to Know Semiconductors by M.E. Levinshtein and G. S. Simin
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